CHM310PT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 100 volts current 170 mampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * other switching applications. 2007-01 * rugged and reliable. * high saturation current capability. a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM310PT units v dss drain-source voltage 100 v v gss gate-source voltage 20 v i d maximum drain current - continuous ma - pulsed p d maximum power dissipation 300 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 417 170 c/w (note 1) note : 1. part mounted on fr-4 board with recommended pad layout. 2. short duration test pulse used to minimize self-heating effect 680 * small flat package. (sc-59 ) t j operating temperature range -55 to 150 c (note 1) c i r c u i t s d g (1) (2) (3) (note 1) s c - 5 9 / s o t - 3 4 6 (1) (2) (3) dimensions in millimeters 0.95 0.95 1.7~2.1 2.7~3.1 0.89~1.3 0.3~0.51 0.085~0.2 0~0.1 1.2~1.9 2.1~2.95 0.3~0.6 sc-59/sot-346
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM310PT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 9 o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =10v , i d = 4.0a r ds(on) static drain-source on-resistance w vgs=4.5v, id=170ma switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 30v i d = 0.28a , v g s = 10 v 8 t r rise time 8 100 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 10 a n a 100 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 100 v, v v gs gs = 20v, = 0 v v ds = 0 v +50 -50 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 1 ma 0.8 v vgs=10v, id=170ma 13 t f fall time 16 q g total gate charge 0.2 vds=10v, id=0.22a vgs=10v turn-off time t off rgen= 50 w (note 2) 2.8 80 nc drain-source diode characteristics and maximum ratings 1.4 i v sd drain-source diode forward current drain-source diode forward voltage i s = 115ma , v g s = 0 v 115 1.4 ma v 6 5 4.5 0.15 2 i gssr n a ms
r a t i n g c h a r a c t e r i s t i c c u r v e s ( chm310 pt ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 1.0 2.0 0 0.1 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics v gs= 4v v gs= 3v 0.1 0.8 1.2 id , drain current (a) figure 2. id vs rds(on) characteristics 0.2 0.3 0.4 2.2 0.8 -50 1.2 1.6 t , jun ctio n t emperature (c) j 0.4 2.0 drain-source on-resistance r , no rmalized ds(on) figure 4. on-resistance variation with temperature id=170ma vgs=10v -25 0 25 50 75 100 125 150 temperature 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 3. gate threshold variation with id=250ua vds=vgs 5.0 0.3 0.4 0.5 v gs= 10,7,6,5v 4.0 3.0 0.2 0.6 0.7 0.5 0.6 1.6 2.0 2.4 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) v gs= 3v v gs= 4v v gs= 5,6,7,10v
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